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P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 ? MARCH 94
FEATURES
* 50 Volt V DS
* R DS(on) =10 ?
* Low threshold
ZVP4105A
G
D
S
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T amb =25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
SYMBOL
V DS
I D
I DM
V GS
P tot
T j :T stg
VALUE
-50
-175
-520
± 20
625
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV DSS
-50
V
I D =-0.25mA, V GS =0V
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
V GS(th)
I GSS
I DSS
-0.8
-2.0
10
-15
-60
-100
V
nA
μ A
μ A
nA
ID=-1mA, V DS = V GS
V GS = ± 20V, V DS =0V
V DS =-50V, V GS =0V
V DS =-50V, V GS =0V, T=125°C (2)
V DS =-25V, V GS =0V
Static Drain-Source On-State R DS(on)
Resistance (1)
10
?
V GS =-5V,I D =-100mA
Forward Transconductance
(1)(2)
Input Capacitance (2)(4)
g fs
C iss
50
40
mS
pF
V DS =-25V,I D =-100mA
Common Source Output
Capacitance (2)(4)
Reverse Transfer
Capacitance (2)(4)
C oss
C rss
15
6
pF
pF
V DS =-25V, V GS =0V, f=1MHz
Turn-On Delay Time (2)(3)(4) t d(on)
10
ns
Rise Time (2)(3)(4) t r
Turn-Off Delay Time (2)(3)(4) t d(off)
10
18
ns
ns
V DD ≈ -30V, I D =-270mA
Fall Time (2)(3)(4)
t f
25
ns
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2%
(2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
3-435
(
4
)
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